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Global Magneto Resistive RAM (MRAM) Market 2017 – Nippon Electric Company Ltd., Avalanche Technologies, Everspin Technologies Inc., NVE Corporation, Honeywell International Inv.

Global Magneto Resistive RAM (MRAM) Market 2017 – Nippon Electric Company Ltd., Avalanche Technologies, Everspin Technologies Inc., NVE Corporation, Honeywell International Inv.

November 27
19:24 2017

Global Magneto Resistive RAM (MRAM) Market 2017
Magneto Resistive RAM (MRAM) Market (By Product: Toggle Magneto Resistive RAM and Second-Generation Magneto Resistive RAM; By Application: Automotive, Enterprise Storage, Consumer Electronics, Robotics, Aerospace & Defense; By Geography: North America, Europe, Asia-Pacific and RoW) Global Scenario, Market Size, Outlook, Trend and Forecast, 2015-2024

Global Magneto Resistive RAM (MRAM) Market Report, published by Fior Markets, forecast that the global market is expected to reach $807 Million by 2024 from $52 Million in 2016, growing at a CAGR of 40.9% from 2016 to 2024. By geography, Asia Pacific and North America are expected to grow at a CAGR of 42.0% and 41.6%, respectively, during the forecast period.

Magneto Resistive RAM (MRAM) Market (By Product: Toggle Magneto Resistive RAM and Second-Generation Magneto Resistive RAM; By Application: Automotive, Enterprise Storage, Consumer Electronics, Robotics, Aerospace & Defense; By Geography: North America, Europe, Asia-Pacific and RoW) Global Scenario, Market Size, Outlook, Trend and Forecast, 2015-2024″

Request for Free Sample Report: https://www.fiormarkets.com/report-detail/138473/request-sample

The global MRAM market is majorly driven by increasing demand for flexible & wearable electronics from emerging economies. Furthermore, characteristics of MRAM such as high endurance, high reading and writing capacity, high speed and less electricity consumption drive the demand of MRAM market.

The MRAM market has been categorized into product, application and geography. Product segment includes toggle magneto resistive RAM and second-generation magneto resistive RAM (STT MRAM). Second-generation magneto resistive RAM (STT MRAM) accounted for the highest market share in 2016. Moreover, Application segment is further bifurcated into automotive, enterprise storage, consumer electronics, robotics, aerospace & defense and other applications. Enterprise storage application accounted the majority of share followed by automotive application in the year 2016.

North America, Europe, Asia-Pacific and Rest of the World (RoW) are the major geographical segments of the global MRAM market. Asia Pacific is the fastest growing region in the global MRAM market, owning to increasing demand for wearable electronics, high penetration of internet and usage of IoT. Asia Pacific is also accounted the largest share of the market followed by North America in the year 2016.

To browse the complete report, visit at: https://www.fiormarkets.com/report/magneto-resistive-ram-mram-market-by-product-toggle-138473.html

The key players of MRAM market are Nippon Electric Company Ltd., Avalanche Technologies, Everspin Technologies Inc., NVE Corporation, Honeywell International Inv., Toshiba, Intel Corp., Samsung Electronics Co. Ltd., Hewlett-Packard Enterprise, Infineon Technologies, and NXP Semiconductors, among others

About Fior Markets

Fior Markets is a leading market intelligence company that sells reports of top publishers in the technology industry. Our extensive research reports cover detailed market assessments that include major technological improvements in the industry. Fior Markets also specializes in analyzing hi-tech systems and current processing systems in its expertise.

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Website: www.fiormarkets.com/report/magneto-resistive-ram-mram-market-by-product-toggle-138473.html

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